Semiconductor · Instrumented Wafers

Wafer Sensors.

Instrumented wafers — thermocouple, bonded and RTD — for semiconductor processing equipment, where knowing and controlling the temperature at the surface of a wafer is critical.

SenseMap & Control
−50→1200°C
Temperature Range
64
TEDAQ TC Inputs
6
Wafer Solutions
1941
Trusted Since

Measured at the Surface

Where the most vital processes happen

Most manufacturers embed their sensors within the wafer's core. Thermo Electric focuses measurement at the wafer's surface, where the most vital processes occur — delivering faster, more accurate response through precise placement of the sensing elements.

We have the expertise to design and install our sensors on a wide range of substrates — supplied bare, coated or patterned — with custom shapes and sizes available.

Thermo Electric instrumented wafers
Applications
Rapid Thermal Processing (RTP) Rapid Thermal Annealing (RTA) Post Exposure Bake (PEB) Chemical Vapor Deposition (CVD) Physical Vapor Deposition (PVD) ION Implantation Solar Cell
Substrates
Silicon AlTiC Glass Ceramic Bare / Coated / Patterned Custom shapes & sizes
Data Acquisition

TEDAQ

Capture, map and analyze wafer temperature data

Thermo Electric's data-acquisition (TEDAQ) and temperature-mapping software provide fully integrated, multipoint temperature measurement across any instrumented-wafer assembly — an embedded hardware-and-software solution easily adapted to any wafer size.

Up to 64 TC inputs Any wafer size Multipoint mapping Windows compatible

The Wafer Range

From low-temperature RTDs to 1,200 °C laser-welded wafers

TC-350 instrumented wafer
−50 to 350 °C

TC-350

Thermocouple · H & D builds

Surface-focused thermocouple wafer for accurate, fast response. Available High-Performance (smallest sensing elements, low thermal mass) and Heavy-Duty (rugged, extended lifespan) builds.

TC-700 instrumented wafer
−50 to 700 °C

TC-700

Thermocouple · H & D builds

Higher-temperature thermocouple wafer with the same precise surface placement. Offered in High-Performance and Heavy-Duty builds for demanding process environments.

TC-1200 instrumented wafer
−50 to 1,200 °C

TC-1200

High Temp / High Purity

Laser-welded silicon with no bonding agent — one of the cleanest designs available, eliminating out-gassing for extreme high-temperature, high-purity operation.

BTC700H bonded wafer
Max 700 °C

BTC700H — Bonded Wafer

Low Profile / High Response

Low-profile mated wafer pair for wafer-bonding equipment — MEMS, MOEMS, silicon-on-insulator (SOI), wafer-level packaging and 3D chip stacking.

RTD instrumented wafer
Max 240 °C

RTD Wafer

Low Temp / High Accuracy

Higher accuracy and stability than thermocouple wafers, with the repeatability to maintain initial accuracy over extended periods for fabrication-equipment monitoring.

Profile and spike thermocouples
Precious Metal · B / S / R

Profile & Spike TCs

Diffusion & Doping

Precious-metal (Type B, S, R) spike and profile thermocouples for diffusion furnaces and doping — built to be trusted by the most rigorous semiconductor processes.

Get a Custom Solution

Built to your wafer, your process.

Fill out our tailored quote form with your specific requirements, or reach out for more information about our instrumented-wafer solutions.